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我打算仿真一个FinFET,提取它的直流特性和电容参数。直流仿真没问题,但是交流小信号仿真一直不收敛出不来。不知道哪里出了问题。这是我的直流仿真曲线,交流仿真曲线和代码。有没有懂的大佬帮忙看看。总是有句警告:Warning: Possible log file error for log file 3D-N-FinFET.log. 
go atlas 
 
mesh three.d 
 
x.mesh loc=0.000 spac=0.010 
x.mesh loc=0.064 spac=0.010 
x.mesh loc=0.096 spac=0.010 
x.mesh loc=0.128 spac=0.010 
x.mesh loc=0.160 spac=0.010 
x.mesh loc=0.224 spac=0.010 
 
y.mesh loc=0.000 spac=0.010 
y.mesh loc=0.002 spac=0.010 
y.mesh loc=0.007 spac=0.010 
y.mesh loc=0.009 spac=0.010 
y.mesh loc=0.023 spac=0.010 
y.mesh loc=0.025 spac=0.010 
y.mesh loc=0.030 spac=0.010 
y.mesh loc=0.032 spac=0.010 
 
z.mesh loc=0.000 spac=0.010 
z.mesh loc=0.090 spac=0.010 
z.mesh loc=0.150 spac=0.010 
z.mesh loc=0.190 spac=0.010 
z.mesh loc=0.195 spac=0.010 
z.mesh loc=0.197 spac=0.010 
z.mesh loc=0.200 spac=0.010 
z.mesh loc=0.205 spac=0.010 
z.mesh loc=0.207 spac=0.010 
#chengdi 
region num=1 x.min=0.000 x.max=0.224 y.min=0.000 y.max=0.032 z.min=0.000 z.max=0.090 material=silicon 
#yanghuawu 
region num=2 x.min=0.000 x.max=0.224 y.min=0.000 y.max=0.032 z.min=0.090 z.max=0.150 material=sio2 
#source 
region num=3 x.min=0.000 x.max=0.064 y.min=0.000 y.max=0.032 z.min=0.150 z.max=0.195 material=silicon 
#fin 
region num=4 x.min=0.064 x.max=0.096 y.min=0.009 y.max=0.023 z.min=0.150 z.max=0.195 material=silicon 
region num=5 x.min=0.096 x.max=0.128 y.min=0.009 y.max=0.023 z.min=0.150 z.max=0.195 material=silicon 
region num=6 x.min=0.128 x.max=0.160 y.min=0.009 y.max=0.023 z.min=0.150 z.max=0.195 material=silicon 
#drain 
region num=7 x.min=0.160 x.max=0.224 y.min=0.000 y.max=0.032 z.min=0.150 z.max=0.195 material=silicon 
#gate 
region num=8 x.min=0.096 x.max=0.128 y.min=0.000 y.max=0.007 z.min=0.150 z.max=0.207 material=polysilicon 
region num=9 x.min=0.096 x.max=0.128 y.min=0.007 y.max=0.009 z.min=0.150 z.max=0.197 material=hfo2 
region num=10 x.min=0.096 x.max=0.128 y.min=0.007 y.max=0.025 z.min=0.197 z.max=0.207 material=polysilicon 
region num=11 x.min=0.096 x.max=0.128 y.min=0.009 y.max=0.023 z.min=0.195 z.max=0.197 material=hfo2 
region num=12 x.min=0.096 x.max=0.128 y.min=0.025 y.max=0.032 z.min=0.150 z.max=0.207 material=polysilicon 
region num=13 x.min=0.096 x.max=0.128 y.min=0.023 y.max=0.025 z.min=0.150 z.max=0.197 material=hfo2 
#electrode 
electrode x.min=0.000 x.max=0.064 y.min=0.000 y.max=0.032 z.min=0.190 z.max=0.195 name=source 
electrode x.min=0.160 x.max=0.224 y.min=0.000 y.max=0.032 z.min=0.190 z.max=0.195 name=drain 
electrode x.min=0.096 x.max=0.128 y.min=0.000 y.max=0.002 z.min=0.150 z.max=0.207 name=gate 
electrode x.min=0.096 x.max=0.128 y.min=0.002 y.max=0.030 z.min=0.205 z.max=0.207 name=gate 
electrode x.min=0.096 x.max=0.128 y.min=0.030 y.max=0.032 z.min=0.150 z.max=0.207 name=gate 
#dope 
doping region=3 n.type concentration=1.0e21 uniform 
doping region=7 n.type concentration=1.0e21 uniform 
doping region=5 p.type concentration=1.0e16 uniform 
contact name=gate workfunction=4.8 
 
models srh fermidirac CVT   
method   gummel NewTON maxtrap=20 
 
output  e.field  e.velocity  e.temp  h.velocity  h.temp  band.param  band.temp  con.band  val.band e.mobility 
log outfile=3D-N-FinFET.log 
solve init 
solve vdrain=0.1 
solve vgate=-0.1 vstep=0.05 vfinal=0.8 name=gate 
save outfile=N-FinFET.str 
tonyplot3d N-FinFET.str 
log off 
tonyplot   3D-N-FinFET.log 
# 
extract name="vt" (xintercept(maxslope(curve(abs(v."gate"),abs(i."drain")))) - abs(ave(v."drain"))/2.0) 
 
# 
extract name="subvt" 1.0/slope(maxslope(curve(abs(v."gate"),log10(abs(i."drain"))))) 
quit 
 
 
 
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